FFP08H60STU【PDF 1/5 页】DIODE ULTRA FAST 600V TO-220

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?2009 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FFP08H60S Rev. C1

FFP08H60S — Hyperfast II Diode

November 2013

FFP08H60S

8 A, 600 V, Hyperfast II Diode

Features

? Hyperfast Recovery trr

= 45 ns (@ I

= 8 A)

? Max Forward Voltage, VF

= 2.6 V (@ T

= 25°C)

? 600 V Reverse Voltage and High Reliability

? Avalanche Energy Rated

?RoHS Compliant

Applications

? General Purpose

? SMPS, Power Switching Circuits

? Free-Wheeling Diode for Motor Application

Description

The FFP08H60S is a hyperfast II diode and silicon nitride pas-

sivated ion-implanted epitaxial planar construction.

This device is intended for use as freewheeling/clamping diodes

in a variety of switching power supplies and other power switch-

ing applications. Its low stored charge and hyperfast soft recov-

ery minimize ringing and electrical noise in many power

switching circuits reducing power loss in the switching transis-

tors.

Pin Assignments

Absolute Maximum Ratings

= 25°C unless otherwise noted

Thermal Characteristics

= 25°C unless otherwise noted

Package Marking and Ordering

Information

1. Cathode 2. Anode

TO-220-2L

Symbol Parameter Ratings Unit

VRRM

Peak Repetitive Reverse Voltage 600 V

VRWM

Working Peak Reverse Voltage 600 V

DC Blocking Voltage 600 V

IF(AV)

Average Rectified Forward Current @ TC

= 105

?C8A

IFSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

60 A

TJ, TSTG

Operating Junction and Storage Temperature - 65 to +150

Symbol Parameter Max. Unit

R?JC

Maximum Thermal Resistance, Junction to Case 2.5

?C/W

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FFP08H60STU FFP08H60S TO-220-2L Tube N/A N/A

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